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Preparation of InN epitaxial layers in InCl 3 NH 3 system
Author(s) -
Marasina L. A.,
Pichugin I. G.,
Tlaczala M.
Publication year - 1977
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19770120603
Subject(s) - epitaxy , sapphire , materials science , crystallography , kinetic energy , crystal growth , analytical chemistry (journal) , chemistry , nanotechnology , optics , layer (electronics) , physics , laser , quantum mechanics , chromatography
The epitaxial growth of InN by the open tube flow method using the interaction of InCl 3 and NH 3 is discussed. The influence of various technological parameters on the process and structure perfection of the epitaxial layers, grown on the single crystal (0001)‐oriented sapphire substrates is considered. The main kinetic dependences of the process are plotted and discussed. InN epitaxial layers were mosaic and n‐type with electron concentration 2 · 10 20 –8 · 10 21 cm −3 and mobilities 50‐35 cm 2 /V · s, respectively.