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Preparation of HgJ 2 single crystals and the effect of doping upon their physical properties
Author(s) -
Růžička M.,
Řežábková H.,
Besedičová Š,
Doupovec J.,
Strácelský J.
Publication year - 1976
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19760111206
Subject(s) - doping , impurity , atmospheric pressure , evaporation , materials science , electrical resistivity and conductivity , analytical chemistry (journal) , acetone , conductivity , solvent , phase (matter) , inorganic chemistry , chemistry , chromatography , thermodynamics , organic chemistry , optoelectronics , physics , quantum mechanics , meteorology
HgJ 2 single crystals both pure and doped were grown from an acetone solution using the method of the slow solvent evaporation. The iodides NaJ, KJ, SrJ 2 , CdJ 2 , NH 4 J were used as doping materials in concentrations from 0.01 to 2.0 wt%. The grown crystals were studied with respect to the influence of impurity doping on the electric conductivity and the phase transitions at atmospheric pressure (the DTA method) and high pressure as well (with the help of the high pressure optical cell).