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Study of the domain structure of GASH single crystals and its correlation with their dielectric and switching behaviour
Author(s) -
Szcześniak L.,
Śliwa M.,
Hilczer B.,
Meyer K. P.,
Margraf R.
Publication year - 1976
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19760111111
Subject(s) - domain (mathematical analysis) , dielectric , materials science , scanning electron microscope , crystallography , composite material , optoelectronics , chemistry , mathematics , mathematical analysis
The domain structure topography of GASH single crystals is investigated by electron microscope decoration technique. A large variety of domain shapes was found in “young” crystals immediately after growth, whereas after one or more years of ageing the domain structure became coarse. The domain structure of the samples is related with their dielectric and switching behaviour.