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Surface and contact properties of GaN produced from GaAs
Author(s) -
Nieke H.,
Rennert K. J.,
Thoma A.
Publication year - 1976
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19760110805
Subject(s) - nitriding , materials science , hysteresis , contact resistance , optoelectronics , metallurgy , composite material , layer (electronics) , condensed matter physics , physics
Samples of some thickness and extent showed fine cracks on the brink already after oxidization in Ga 2 O 3 which became more distinctive after nitriding into GaN. Current‐voltage characteristics were recorded from different long nitrided samples with contacts of In, Sn, Sb, and Te. The long nitrided samples had a lower resistance. Some of the samples showed hysteresis effects with characteristics similar to varistors.