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Low‐angle boundary investigation in silicon single crystals
Author(s) -
Dashevsky M. Ya.,
Eidenson A. M.,
Kazimirov N. I.,
Khatsernov M. A.
Publication year - 1976
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19760110711
Subject(s) - materials science , silicon , crystallography , isotropic etching , dislocation , etching (microfabrication) , thermal , slip (aerodynamics) , crystal (programming language) , copper , doping , condensed matter physics , composite material , chemistry , optoelectronics , metallurgy , physics , layer (electronics) , meteorology , computer science , thermodynamics , programming language
Low‐angle boundaries in Si single crystals grown from the melt in [111], [100], [112], [110], [118] and [115] directions were investigated by chemical etching, copper decoration technique and X‐ray topography. — LAB of four types were found in planes parallel to the crystal growth axes. Rearrangement of dislocations from slip bands into LAB was observed in heavily‐doped Si crystals. The origin of LAB in melt grown Si crystals is discussed. It is shown that these boundaries are well interpreted in terms of dislocation alignment formation in the thermal stress field of the growing crystal.