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Initial stage and kinetics of epitaxial film growth of A 3 B 5 compounds
Author(s) -
Aleksandrov L. N.,
Krivorotov E. A.,
Sidorov Ju. G.
Publication year - 1976
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19760110603
Subject(s) - epitaxy , kinetics , decomposition , adsorption , materials science , thin film , kinetic energy , analytical chemistry (journal) , chemistry , crystallography , chemical engineering , nanotechnology , layer (electronics) , organic chemistry , physics , quantum mechanics , engineering
Thermodynamic and kinetic characteristics of GaAs film decomposition, mechanisms of film formation and growth, main features of the film growth under epitaxy in chemical transport were considered. The stages of epitaxial film growth and the relief smoothing of film surface were discussed applying data of electron microscopy investigations and theoretical considerations. The period of continuous film formation and degrees of the surface covering of the film growth by adsorbed substance were estimated.