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Sign of crystallographic polarity of epitaxial {0001} – GaN layers grown of sapphire substrates
Author(s) -
Brühl H.G.,
Campe U.,
Schmidt W.,
Seifert W.
Publication year - 1976
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19760110315
Subject(s) - physics , philosophy , condensed matter physics , crystallography , chemistry