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New semiconductor materials in microelectronics
Author(s) -
Aleksandrov L. N.
Publication year - 1976
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19760110203
Subject(s) - microelectronics , semiconductor , silicon , materials science , optoelectronics , epitaxy , semiconductor device , range (aeronautics) , engineering physics , semiconductor materials , nanotechnology , engineering , composite material , layer (electronics)
Properties of non‐silicon systems are discussed. In addition to Si, the use of materials possessing a higher mobility and a shorter lifetime (Ge, GaAs and other), permits to increase working frequencies and switching speed, to expand the temperature range of the microelectronic devices operation. The problem can be solved by obtaining thin and homogenous epitaxial semiconductor films and insulating layers.