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Chemical and plasmachemical vapour deposition of aluminium nitride layers
Author(s) -
Arnold H.,
Biste L.,
Bolze D.,
Eichhorn G.
Publication year - 1976
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19760110104
Subject(s) - aluminium , aluminium nitride , spinel , quartz , chemical vapor deposition , materials science , nitride , aluminium oxide , deposition (geology) , ammonia , epitaxy , silicon nitride , silicon , nitrogen , analytical chemistry (journal) , metallurgy , mineralogy , chemical engineering , chemistry , layer (electronics) , composite material , nanotechnology , chromatography , organic chemistry , geology , paleontology , sediment , engineering
AIN was deposited pyrolytically by means of the aluminium trichloride‐ammonia process (either introducing both compounds seperately or in complex form) and by plasmachemical reaction of aluminium trichloride with nitrogen at temperatures from 600 to 1300°C. Layers deposited onto (100) spinel had an epitaxial (0001) orientation, whereas fibre textures resulted on silicon and quartz glass.