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Luminescence of (GaAl)As layers grown by temperature gradient liquid phase epitaxy
Author(s) -
Kühn G.,
Zehe A.,
Sutter D.,
Streubel P.,
Neels H.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100907
Subject(s) - cathodoluminescence , electroluminescence , materials science , epitaxy , luminescence , diffusion , optoelectronics , diode , recombination , phase (matter) , liquid phase , chemistry , nanotechnology , layer (electronics) , thermodynamics , physics , biochemistry , organic chemistry , gene
In this paper the growth of Al x Ga 1–x As layers with nearly constant composition along their thickness is described. By means of electroluminescence and cathodoluminescence measurements recombination mechanisms connected with the presence of Si are discussed. The aging behaviour of the light emitting diodes is supposed to depend on the AlAs content of the layers and to be connected with the diffusion of acceptors in the p‐n junction region.