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Investigations on the defect depth of electroerosive‐cut Te single crystals by reflection electron diffraction (RHEED)
Author(s) -
Messerschmidt A.,
Lehmann G.,
Kanis M.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100813
Subject(s) - reflection high energy electron diffraction , electron diffraction , polishing , reflection (computer programming) , orientation (vector space) , materials science , crystal (programming language) , single crystal , electron , ion , diffraction , optics , crystallography , chemistry , geometry , physics , composite material , mathematics , organic chemistry , computer science , programming language , quantum mechanics
Results of the experimentally determined defect depth due to electroerosive working of Te single crystals as a function of crystal orientation and electric cutting energy by RHEED are given. The abrasion of the disturbed surface layer was made by chemical etch polishing as well as by bombardment with Ar + ions. The defect depths determined from the RHEED patterns depend on the crystal orientation and the applied cutting energy. In case of the lowest cutting energy, it has a value of about 3 μm for the (0001)‐orientation and 6 μm for the (10 1 0)‐orientation, the corresponding values for the highest cutting energy are about 8 μm and 20 μm, respectively. It is discussed in how far defect depths determined from the interpretation of RHEED patterns correspond to the “real defect depths” which can be determined by other measuring techniques.