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A steady‐state procedure of liquid phase epitaxy
Author(s) -
Kühn G.,
Neels H.,
Höbler H.J.,
Sutter D.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100809
Subject(s) - epitaxy , liquid phase , materials science , constant (computer programming) , phase (matter) , crystal growth , steady state (chemistry) , deposition (geology) , condensed matter physics , thermodynamics , optoelectronics , chemistry , nanotechnology , physics , computer science , geology , layer (electronics) , paleontology , organic chemistry , sediment , programming language
A turning‐shifting technique is reported permitting the deposition of epitaxial layers at constant temperatures and with small melting volumes. Basic parameters of GaAs are studied and the development of crystal growth is followed up in dependence on temperature.