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Low‐angle boundaries in silicon crystals
Author(s) -
Eidenson A. M.,
Dashevsky M. Ya.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100612
Subject(s) - crystallography , materials science , silicon , thermal , crystal (programming language) , dislocation , lattice (music) , condensed matter physics , crystal growth , diamond , chemistry , physics , thermodynamics , composite material , optoelectronics , computer science , programming language , acoustics
The main types of low‐angle boundaries (LAB) in single crystals with diamond‐type lattice are determined. The scheme of dislocation alignments formation in thermal stress field of growing crystal which allows to derive types of possible LAB and their distribution in crystal is proposed. On its basis the LAB formation in Si single crystals grown in different crystallographic directions is considered. It appears that LAB types and their distribution in the crystal depend on the character of the thermal stresses and on the crystal growth direction.