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Preparation of AlGaPAs heterostructures
Author(s) -
Alferov Zh.,
Andrejev V. M.,
Godlinnik T. B.,
Konnikov S. G.,
Larionov V. R.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100607
Subject(s) - heterojunction , crystallization , solid solution , materials science , band gap , semiconductor , substrate (aquarium) , lattice (music) , lattice constant , thermal , optoelectronics , condensed matter physics , optics , thermodynamics , metallurgy , physics , diffraction , oceanography , acoustics , geology
The present paper reports on the results of an investigation of crystallization of multilayer structures with a narrow‐gap semiconductor surrounded by two wide‐gap ones in the Al‐Ga‐P‐As system on GaAs and GaP substrates. Influence of the lattice parameters' difference on the value of thermal stress in structures with a composition gradient was determined by the bend of structures separated from the substrate. It has been proved that with the P concentration in solid solutions being less than 1% heterojunctions with less tensions than in the Al–Ga–As system are available. A new method of obtaining Al x Ga 1–x P y As 1– y solid solutions with the concentration of P proportional to that of Al has been worked out on the basis of which multilayer heterolight‐emitting structures have been prepared.