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Epitaxy of GaN by means of a nitrogen stream activated by a high frequency electrical field discharge
Author(s) -
Głowacki G.,
Łsappa R.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100415
Subject(s) - field (mathematics) , epitaxy , nitrogen , citation , physics , materials science , computer science , library science , nanotechnology , mathematics , quantum mechanics , layer (electronics) , pure mathematics
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