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Formation of dislocation structure in silicon layers on non‐orienting substrates
Author(s) -
Meyer S.,
Aseev A. L.,
Klimenko A. G.,
Klimenko E. A.,
Stenin S. I.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100303
Subject(s) - materials science , dislocation , dislocation creep , peierls stress , silicon , crystallography , transmission electron microscopy , composite material , condensed matter physics , grain boundary , microstructure , metallurgy , nanotechnology , chemistry , physics
A dislocation structure of Si layers crystallized from a floating grain on quartz glass and mullite ceramics substrates has been investigated by transmission electron microscopy (TEM) including the high‐voltage one. The effect of the layer orientation on the crystallographic features of dislocation distribution and brittle fracture in Si‐SiO 2 system has been considered. The dislocation structure is proved to form mainly at temperatures lower than 0.8 of absolute melting temperature ( T m ) of Si. Dislocation sources are located inside the crystallizable layer, and they are dislocations appearing from grain as well as the dislocation bundles near the interface. The cross slip of screws plays an essential role in dislocation multiplication. The difference of thermal expansion coefficients of the layer and substrate determines the finite dislocation density near the interface and in the bulk of the layer.