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Optical properties of Ga 1– x In x As LPE‐layers and p‐n structures
Author(s) -
Zehe A.,
Butter E.,
Jacobs B.,
Stary J.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100209
Subject(s) - cathodoluminescence , materials science , epitaxy , electroluminescence , crystal (programming language) , crystallography , absorption (acoustics) , diode , layer (electronics) , dislocation , absorption spectroscopy , spectral line , analytical chemistry (journal) , luminescence , optics , optoelectronics , chemistry , nanotechnology , physics , chromatography , astronomy , computer science , composite material , programming language
The multiple layer structure nGaAs(n Ga 1–x In x As) p Ga 1–x In x As (0 ≦ × ≦ 0.18) was realized by liquid phase epitaxy from In–Ga–As‐melts on (111)‐oriented GaAs substrates. The InAs‐content of the mixed crystal layers was found to be dominating for crystal perfection and growth rate. The cathodoluminescence spectra of p‐and n‐type Ga 1–x In x As and spectral distribution of the electroluminescence from pn‐junctions were measured at T = 77 K and 300 K. The external quantum efficiency wa found to have a maximum for diodes with x ≈ ≈ 0.006. This is caused by the decrease of the optical absorption with increasing x and increasing dislocation density on the other hand.