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Liquid phase epitaxy of Al x Ga 1– x As‐GaAs heterostructures
Author(s) -
Alferov Zh. I.,
Andreyev V. M.,
Konnikov S. G.,
Larionov V. R.,
Shelovanova G. N.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100205
Subject(s) - heterojunction , epitaxy , substrate (aquarium) , crystallization , materials science , supercooling , phase (matter) , liquid phase , optoelectronics , thermodynamics , chemistry , nanotechnology , layer (electronics) , geology , physics , organic chemistry , oceanography
This paper is concerned with the investigation of the peculiarities of the application of liquid phase epitaxy for obtaining multilayer structures with heterojunctions in the AlAs–GaAs system. Segregational depletion of Al in liquid and in solid phases is characteristic of this system. It is proved that supercooling of the substrate and numerous inclusions of Al allow to decrease this segregational depletion of Al and to obtain layers of nearly constant composition up to 600 μm in thickness. A new technique of crystallization of structures from a limited volume of melt with the change of solutions by way of compulsory squeezing out of the foregoing solution by the following one is put forward with the view to perfect the planarity of multilayer structures with abrupt heterojunctions and to improve the complete change of solutions on a substrate. The results of the study of various methods of controlling the value and direction of the Al concentration gradient are listed. It has been proved that structures with fluent increase of Al concentration during the crystallization process and also structures with alteration in the gradient direction of Al concentration may be obtained by way of artificial slowing down or acceleration of the process of mixing up solutions of various compositions.