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Domain structure and dielectric properties of TGS and DTGS single crystals depending on growth conditions
Author(s) -
Tsedrik M. S.,
Zaborovski G. A.,
Demidovich N. P.,
Margolin L. N.
Publication year - 1975
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19750100105
Subject(s) - supersaturation , domain (mathematical analysis) , diagonal , dielectric , materials science , crystallography , table (database) , thermodynamics , condensed matter physics , mathematics , chemistry , mathematical analysis , physics , computer science , geometry , data mining , optoelectronics
Abstract The influence of growth temperature and supersaturation of solution on domain structure and dielectric properties of TGS and DTGS single crystals was investigated. The qualitative and quantitative analysis of domain structures was carried out. The optimal growth conditions were found. It proves to be useful to arrange the measured values in table where lines correspond to growth temperatures and columns – to supersaturations for investigation of optimal growth conditions. The diagonal of extremal values exists in this table. The existence of optimal growth conditions explains in terms of interaction between domain and defect structures.