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Preparation, Morphology and Structure of Cadmium Telluride Epitaxial Layers on Germanium Substrates
Author(s) -
Kamadjiev P. R.,
Mladjov L. K.,
Gospodinov M. M.,
Vassilev I. S.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740091106
Subject(s) - germanium , cadmium telluride photovoltaics , epitaxy , materials science , morphology (biology) , layer (electronics) , telluride , hydrogen , atmosphere (unit) , cadmium , crystallography , nanotechnology , optoelectronics , chemistry , metallurgy , geology , geography , silicon , meteorology , organic chemistry , paleontology
Growth conditions of cadmium telluride single crystal layers on germanium (111), (110), (100), (112) substrates in quasi‐closed “sandwich” system in a hydrogen atmosphere, were investigated in this paper. The peculiarities of layer morphology for the different orientations are presented.