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Information about the Growth Process from Aluminium Concentration Profiles in Ga 1− x Al x As Liquid Phase Epitaxial Layers
Author(s) -
Jacobs K.,
Jacobs B.,
Streubel P.,
Butter E.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740091105
Subject(s) - electron microprobe , nucleation , epitaxy , aluminium , microprobe , materials science , homogeneous , layer (electronics) , phase (matter) , analytical chemistry (journal) , liquid phase , crystallography , mineralogy , chemistry , metallurgy , composite material , thermodynamics , physics , organic chemistry , chromatography
The variation in the composition of Ga 1− x Al x As LPE layers with x < 0.37 as a function of layer thickness is examined by electron beam microprobe analysis. From the combination of these results with the experimentally established relation between layer thickness and cooling interval information is obtained about the onset of homogeneous nucleation in the LPE growth.