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Chemical Effects at the Deposition of Germanium onto Yttrium‐Iron‐Garnet Single Crystals
Author(s) -
Wendt M.,
Fischer K.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740091104
Subject(s) - germanium , chemical vapor deposition , evaporation , monolayer , yttrium , substrate (aquarium) , yttrium iron garnet , deposition (geology) , materials science , epitaxy , analytical chemistry (journal) , crystallography , layer (electronics) , chemistry , nanotechnology , metallurgy , condensed matter physics , silicon , thermodynamics , geology , physics , paleontology , oceanography , chromatography , sediment , oxide
At the deposition of Ge onto YIG‐crystals by uhv‐evaporation a sharply limited temperature T st was found with no further deposition above this point. Several experimental facts suggest the following model: incoming Ge atoms pick out oxygen atoms from the substrate and reevaporate as GeO. The step temperature T st is defined by an equilibrium of the incoming Ge vapour rate, r Ge , and the GeO evaporation rate. For r Ge = 3 monolayers/sec we found T st = 510°C.