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Einfluß der Transportkinetik auf die Kristallisation von A II B IV C 2 V ‐Verbindungen beim Gasphasentransport
Author(s) -
Winkler Konrad,
Hein Klaus,
Leipner Klaus
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740091103
Subject(s) - crystallization , crystal growth , crystallography , ternary operation , crystal (programming language) , crystallographic defect , chemistry , materials science , organic chemistry , computer science , programming language
The reported investigation intended to find tendencies in the influence of thermal and chemical conditions of chemical transport reactions on the growth of ZnSiP 2 and ZnSiAs 2 crystals. A more favourable crystallisation with less intergrowth is proved, if transport gases of the same system — as e.g. ZnCl 2 or SiCl 4 — is used instead of PbCl 2 and TeCl 4 . — Depending on the concentration of the transporting medium the largest amount of crystals with lengths of more than 5 mm coincides with the point of lowest transport rate. The number of crystal defects increases with the dimensions of the crystals. — From the experimental results a hypothesis for explaining the locally different growth of crystals of ternary compounds is presented.