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Determination of Composition and Inhomogeneity in GaAs 1−x P x Epitaxial Layers
Author(s) -
Somogyi M.,
Barna Á.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740091017
Subject(s) - epitaxy , microprobe , composition (language) , analytical chemistry (journal) , calibration , materials science , schottky diode , chemical composition , electron microprobe , calibration curve , chemistry , mineralogy , optoelectronics , mathematics , nanotechnology , metallurgy , diode , chromatography , statistics , detection limit , linguistics , philosophy , layer (electronics) , organic chemistry
A method is given for the rapid determination of the composition and the carrier concentration in GaAs 1−x P x epitaxial layers. The composition was determined from the photoresponse of the Schottky‐barriers. A calibration curve was constructed using the absolute composition data determined by microprobe analysis. The concentration values were obtained from the usual C‐V dependence.