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The Thermal Etching of GaP
Author(s) -
Kocsis S.,
Lendvay E.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740091008
Subject(s) - torr , argon , etching (microfabrication) , materials science , polishing , thermal , hydrogen , evaporation , thermal decomposition , atmospheric temperature range , range (aeronautics) , analytical chemistry (journal) , chemistry , composite material , thermodynamics , physics , organic chemistry , layer (electronics) , chromatography
The thermal decomposition and etching of GaP have been investigated. The {111} GaP surfaces were treated in 10 −2 —10 −5 torr vacuum, and in hydrogen and argon atmosphere, in a temperature range of 900—1300 K. Under the different experimental conditions the etched surfaces show different morphological characteristics and polar properties, from which the suitable range for thermal etching or polishing can be choosen. All experiments show that the evaporation mechanism in vacuum and argon is similar, but in hydrogen the process is different.