Investigation of In x Ga 1−x As films grown from thin solution layer | Zendy

Bolchovitianov Yu. B. | Zendy; Zembatov H. B. | Zendy

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Investigation of In x Ga 1−x As films grown from thin solution layer

Author(s) -

Bolchovitianov Yu. B.,

Zembatov H. B.

Publication year - 1974

Publication title -

kristall und technik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0023-4753

DOI - 10.1002/crat.19740091002

Subject(s) - layer (electronics) , substrate (aquarium) , materials science , thin film , deposition (geology) , phase (matter) , morphology (biology) , dislocation , composition (language) , liquid phase , analytical chemistry (journal) , solid solution , crystallography , chemistry , composite material , chromatography , nanotechnology , thermodynamics , metallurgy , physics , organic chemistry , paleontology , linguistics , oceanography , genetics , philosophy , sediment , biology , geology

In x Ga 1−x As films with x ⩽0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental results. The dependences between compositions of liquid and solid phases at 800°, 750° and 700°C were determined. The morphology of the film surface was investigated as a function of liquid phase composition and (100), (111) A, (111) B substrate orientations. Dislocation density increases from 10 4 cm −2 to 10 7 cm −2 with change of x from 0 to 0.12.

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