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The Chemical Vapour Deposition of Tantalum
Author(s) -
Jerreat D. J.,
Rawlings Rees D.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740090905
Subject(s) - tantalum , deposition (geology) , chemical vapor deposition , materials science , total pressure , chemistry , analytical chemistry (journal) , metallurgy , thermodynamics , environmental chemistry , nanotechnology , geology , sediment , paleontology , physics
The effect of the total pressure, feed temperature, deposition temperature, and reaction tube inclination and geometry on the chemical vapour deposition of tantalum from the pentaiodide has been investigated. Transport rates as high as 350 mg hr −1 were achieved in inclined tubes of specific geometry with a feed temperature of 650°C and a deposition temperature of 1200°C. The dependence of the transport rate on the total pressure, and the feed and deposition temperatures has been analysed and suggestions made as to the rate controlling processes.