Premium
Epitaxial Deposition of GaAs in the Ga (CH 3 ) 3 AsH 3 H 2 ‐System (IV) Thermodynamic and Kinetic Considerations
Author(s) -
Petzke W.H.,
Gottschalch V.,
Butter E.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740090706
Subject(s) - deposition (geology) , homogeneous , kinetic energy , epitaxy , substrate (aquarium) , chemical vapor deposition , thermodynamics , chemistry , layer (electronics) , thermodynamic equilibrium , phase (matter) , materials science , nanotechnology , physics , paleontology , oceanography , organic chemistry , quantum mechanics , biology , sediment , geology
Abstract For reactions taking place between the species Ga, As 2 , As 4 , AsH 3 , and H 2 , the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate the importance of the As:Ga proportion that has to apply for perfect layer growth. The mechanism of deposition is in correspondence with a Langmuir‐Rideal Model. For high substrate temperatures a homogeneous reaction in the vapour phase can‐not be excluded.