Epitaxial Deposition of GaAs in the Ga (CH 3 ) 3 AsH 3 H 2 ‐System (IV) Thermodynamic and Kinetic Considerations | Zendy

Petzke W.H. | Zendy; Gottschalch V. | Zendy; Butter E. | Zendy

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Epitaxial Deposition of GaAs in the Ga (CH 3 ) 3 AsH 3 H 2 ‐System (IV) Thermodynamic and Kinetic Considerations

Author(s) -

Petzke W.H.,

Gottschalch V.,

Butter E.

Publication year - 1974

Publication title -

kristall und technik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0023-4753

DOI - 10.1002/crat.19740090706

Subject(s) - deposition (geology) , homogeneous , kinetic energy , epitaxy , substrate (aquarium) , chemical vapor deposition , thermodynamics , chemistry , layer (electronics) , thermodynamic equilibrium , phase (matter) , materials science , nanotechnology , physics , paleontology , oceanography , organic chemistry , quantum mechanics , biology , sediment , geology

For reactions taking place between the species Ga, As 2 , As 4 , AsH 3 , and H 2 , the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate the importance of the As:Ga proportion that has to apply for perfect layer growth. The mechanism of deposition is in correspondence with a Langmuir‐Rideal Model. For high substrate temperatures a homogeneous reaction in the vapour phase can‐not be excluded.

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