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Reflection Splitting in RHEED Investigations of Vacuum Evaporated GaAs Layers
Author(s) -
Hottmann H.,
Schulz M.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740090610
Subject(s) - reflection high energy electron diffraction , reflection (computer programming) , stacking , perpendicular , materials science , condensed matter physics , matrix (chemical analysis) , electron diffraction , vacuum deposition , optics , simple (philosophy) , crystallography , thin film , chemistry , physics , diffraction , nanotechnology , geometry , composite material , nuclear magnetic resonance , computer science , mathematics , programming language , philosophy , epistemology
RHEED‐diagrams of vacuum deposited GaAs‐films with high density of structural defects often show splitting of matrix reflections into satellites. It can be shown by simple models, for example of {111}‐oriented films, that this phenomenon is originated by formation of stacking faults perpendicular to 〈ĪĪĪ〉‐B growth directions of the films. The conditions for 〈110〉 and 〈211〉 azimuths are discussed.