Premium
Epitaxial Deposition of GaAs in the Ga(CH 3 ) 3 AsH 3 H 2 System (III) Heteroepitaxy on Isolating Substrates
Author(s) -
Petzke W.H.,
Gottschalch V.,
Butter E.
Publication year - 1974
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19740090504
Subject(s) - epitaxy , nucleation , supersaturation , layer (electronics) , materials science , deposition (geology) , substrate (aquarium) , pyrolytic carbon , spinel , mineralogy , chemical engineering , crystallography , optoelectronics , chemistry , nanotechnology , metallurgy , geology , organic chemistry , paleontology , oceanography , pyrolysis , sediment , engineering
Epitaxial growth of GaAs has been achieved on CaF 2 , α‐Al 2 O 3 and spinel substrates. X‐ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in terms of supersaturation and its influence on nucleation and layer growth.