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The growth of gallium arsenide films from a thin solution layer between substrates
Author(s) -
Bolchovitianov Yu. B.,
Bolchovitianova R. I.,
Melnikov P. L.
Publication year - 1973
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19730081002
Subject(s) - materials science , substrate (aquarium) , gallium arsenide , layer (electronics) , growth rate , gallium , doping , thin film , surface finish , function (biology) , optoelectronics , composite material , nanotechnology , metallurgy , mathematics , geometry , oceanography , evolutionary biology , biology , geology
Abstract The method of GaAs film growth from a solution between two substrates was considered. The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results. The investigation of the film roughness as a function of cooling rate, distance between substrates and their orientations was fulfilled. Electrical properties of the films as a function of substrate orientations in the interval (100)–(111)–(011) were demonstrated. The possibility of application of this method for the investigation of film doping as a function of temperature and growth rate was shown.