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Investigation of multiple layer heterojunction structures by means of an electron‐beam microprobe‐analyzer
Author(s) -
Alferov Ž. I.,
Andreev V. M.,
Konnikov S. G.,
Kolyškin V. I.,
Larionov V. R.,
Šelovanova G. N.
Publication year - 1973
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19730080908
Subject(s) - microprobe , heterojunction , electron microprobe , materials science , layer (electronics) , analytical chemistry (journal) , absorption (acoustics) , laser , optoelectronics , chemistry , optics , mineralogy , nanotechnology , physics , chromatography , metallurgy , composite material
Multiple layer heterojunction structures in the AlAsGaAs system are investigated by means of an X‐ray microanalyzer. The quantitative determination of Ga and Al is extensively discussed. The correction for atomic number, absorption and secondary fluorescence are considered. For Al x Ga 1– x As layers it is favourable for quantitative analysis the AlK α ‐emission for x < 0,3 and the GaK α ‐emission for x > 0.3. Some multilayer heterojunction structures of laser and luminescence diodes are shown in form of their AlK α microprobe diagrams.