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The influence of heat‐dissipation and temperature fluctuations on SbSI crystallization in thin layers
Author(s) -
Sheftal R. N.,
Nikitin K. V.,
Savitskaya Y. S.
Publication year - 1973
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19730080505
Subject(s) - crystallization , dissipation , materials science , melting point , crystal (programming language) , thermal management of electronic devices and systems , phase transition , thin film , phase (matter) , condensed matter physics , thermodynamics , composite material , chemistry , nanotechnology , physics , organic chemistry , computer science , programming language , mechanical engineering , engineering
Single crystal films of SbSI 5 to 100 μ in thickness have been obtained by crystallization from melts in a close spacing. The films crystallized under conditions under conditions of direct heat ‐dissipation and periodical fluctuations of temperature near the melting point. The phase transition in the films was revealed by means of capacity measurements at temperatures of ∼ 20 °C.