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X‐Ray Topographic Investigation of Silicon Single Crystals Heavily Doped with Sb
Author(s) -
Gorelik S. S.,
Bublik V. T.,
Khatsernov M. A.,
Voronov I. N.,
Makeev H. I.,
Malvinova I. S.
Publication year - 1972
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19720071206
Subject(s) - striation , silicon , impurity , doping , facet (psychology) , materials science , faceting , crystal (programming language) , crystal growth , mineralogy , x ray , optics , contrast (vision) , crystallography , geology , optoelectronics , chemistry , composite material , physics , psychology , social psychology , organic chemistry , personality , computer science , programming language , big five personality traits
Heavily Sb doped silicon crystals grown by Czochralski method were investigated using X‐rays methods. It is shown that growth striation contrast is caused by inhomogeneous Sb distribution. While approaching the lower part of crystals their volume is being contaminated by dispersive particles of noncontrolled impurities that results in decrease of anomalously transmitted X‐rays and weakening of the contrast in topographical growth striation image. In the canal connected with the facet effect crystal structure is less damaged by foreign inclusions.