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The Influence of AsCl 3 Impurity on Growth Mechanism and Structure Perfection of Autoepitaxial Germanium Films
Author(s) -
Stepanova A. N.,
Sheftal N. N.
Publication year - 1972
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19720070115
Subject(s) - impurity , perfection , germanium , materials science , mechanism (biology) , chemical physics , morphology (biology) , condensed matter physics , chemistry , metallurgy , physics , silicon , geology , philosophy , paleontology , quantum mechanics , organic chemistry , epistemology
The changes of film morphology and microtwin concentration in these films caused by AsCl 3 impurity have been studied. The correlation of growth mechanism and structure perfection of the films has been revealed.