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On the Distribution of Impurities during Crystal Growth
Author(s) -
Kaischew R.,
Stoyanov S.
Publication year - 1972
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19720070109
Subject(s) - supersaturation , impurity , distribution (mathematics) , crystal (programming language) , crystal growth , spiral (railway) , adsorption , materials science , atom (system on chip) , mechanism (biology) , constant (computer programming) , chemical physics , crystallography , chemistry , thermodynamics , physics , mathematics , mathematical analysis , quantum mechanics , computer science , embedded system , programming language , organic chemistry
The distribution of impurities in crystalls growing by spiral mechanism is obtained on the assumption that the “impure” atom mobility in the crystal is small. This distribution depends on the adsorption energy as well as on the supersaturation which is supposed to be constant along the growth front.