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Effect of substrate orientation on growth rate and doping level of vapour grown GaAs. Interval (111) A —(100)—(111) B
Author(s) -
Lavrentyeva L. G.,
Kataev Yu. G.,
Moskovkin V. A.,
Yakubenya M. P.
Publication year - 1971
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19710060505
Subject(s) - supersaturation , anisotropy , doping , substrate (aquarium) , growth rate , orientation (vector space) , materials science , crystal (programming language) , crystal growth , simple (philosophy) , condensed matter physics , crystallography , thermodynamics , chemistry , geometry , mathematics , optics , optoelectronics , physics , computer science , philosophy , oceanography , epistemology , programming language , geology
The effect of the substrate orientation and the supersaturation on the growth rate and doping level of vapor grown GaAs is considered. Experimental results are discussed in terms of crystal growth theory developed by B URTON , C ABRERA , F RANK and C HERNOV (BCFCh). It is shown that the main predictions of theory are in agreement with the experimental results. At the same time experimental results, on the whole, are more complicated than predicted by simple crystal growth model. It can be concluded that the BCFCh‐theory is applicable for analysing the growth rate and doping level anisotropy for vapor grown crystals.