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Stages of epitaxial film formation
Author(s) -
Green A.,
Bauer E.,
Peck R. L.,
Dancy J.
Publication year - 1970
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19700050302
Subject(s) - epitaxy , nucleation , coalescence (physics) , chemistry , surface energy , crystallography , halide , materials science , nanotechnology , physics , inorganic chemistry , layer (electronics) , organic chemistry , astrobiology
Abstract Recent experimental results for the epitaxy of f.c.c. metals on alkali halide cleavage planes are compared with theoretical models. The film formation is subdivided into three stages: (1) the nucleation and initial growth stage, (2) the coalescence stage, and (3) the filling‐in stage. The discussion of stage (1) suggest that the epitaxial orientation is not formed during nucleation but develops during the initial growth of crystals. In stages (2) and (3) the interfacial energy between the crystals and their free surface energy play a major role in determining the coalescence process. The importance of the twin boundary energy and of chemical reactions is emphasized. Emphasis is placed on the influence of the substrate surface condition and of residual gases on film growth. The discussion shows that the growth of f.c.c. metals on alkali halides is highly specific for each film‐substrate pair and for the experimental conditions.