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Growth and Structure of Monokristalline Fstruilms of A II B VI compounds
Author(s) -
Kalinkin I. P.,
Muravyeva K. K.,
Sergeyewa L. A.,
Aleskowsky V. B.,
Bogomolov N. S.
Publication year - 1970
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19700050103
Subject(s) - monocrystalline silicon , gallium arsenide , epitaxy , substrate (aquarium) , materials science , thin film , cadmium , cadmium telluride photovoltaics , germanium , evaporation , vacuum evaporation , gallium , torr , mica , zinc , crystallography , analytical chemistry (journal) , chemistry , silicon , optoelectronics , nanotechnology , metallurgy , layer (electronics) , oceanography , physics , geology , thermodynamics , chromatography
In vacuum 10 −4 –10 −5 torr monocrystalline thin layers of CdS, CdS, CdTe, ZnS, ZnSe, ZnTe were prepared on mica, (111) surfaces of germanium and gallium arsenide single crystals and (0001) and (1120) cadmium sulphide surfaces. The film structures and some of their properties (conductivity, n ‐or p ‐mobilities) were shown to depend on temperature conditions of film preparation. It was shown experimentally that in the case of monocrystalline thin films of zinc and cadmium chalcogenides there is a correlation between evaporation and epitaxy temperatures of film preparation. Structure and phase composition of monocrystalline layers are connected with the nature of substrate substances used (including polarity of 〈111〉 direction in gallium arsenide and 〈0001〉 direction in cadmium sulphide).