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Preparation and Investigation of Epitaxial Layers of Al x Ga 1‐ x As solid Solutions and of Heterojunctions in the AlAs‐GaAs system
Author(s) -
Alferov Zh. I.,
Andreyev V. M.,
Korol'Kov V. I.,
Portnoi E. L.
Publication year - 1969
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19690040406
Subject(s) - gallium , epitaxy , heterojunction , solid solution , materials science , analytical chemistry (journal) , photoluminescence , electron microprobe , gallium arsenide , crystallography , optoelectronics , chemistry , nanotechnology , metallurgy , layer (electronics) , chromatography
Single crystal epitaxial layers of Al x Ga 1‐ x As solid solutions and GaAs‐Al x Ga 1‐ x As heterojunctions were obtained on gallium arsenide substrates by crystallization from a solution of arsenic in a gallium‐aluminium melt. Multilayer structures of the type P( n )GaAs‐ p ( n )Al x 1Ga 1‐ x 1As‐ p ( n )Al x 2Ga 1‐ x 2As‐ n ( p )Al x 3Ga 1‐ x 3As( x 1 > x 2 < x 3 ) were prepared by successive growth. A study of the photoluminescence spectra of the epitaxial layers, of the heterojunction electroluminescence and of the data of the electron microprobe analysis showed the parameter “ x ” in crystallizing solid solutions to be maximum at the interface, decreasing gradually as one moves away from it. The dependence of the band gap width on composition of the Al x Ga 1‐ x As solid solutions was determined and the relation between compositions of the solid and liquid phases at various temperatures was studied. In heterojunctions and multilayer structures with heterojunctions coherent radiation was obtained in the energy range 1.47‐1.70 eV with a threshold current density of about 10 3 A cm −2 . Einkristalline epitaktische Schichten von Al x Ga 1‐ x As‐Mischkristallen und GaAs‐Al x Ga 1‐ x As Heteroübergänge auf Galliumarsenid‐Substraten wurden durch Kristallisation aus einer Lösung von Arsen in einer Gallium–Aluminium‐Schmelze erhalten.