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Growth and Structure of Crystals Obtained from Solutions in Systems Based on HgSe and HgTe
Author(s) -
Nistor N.,
Cruceanu E.
Publication year - 1969
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19690040304
Subject(s) - solid solution , electron microprobe , dislocation , crystallography , chemistry , crystal (programming language) , crystal growth , analytical chemistry (journal) , materials science , mineralogy , organic chemistry , chromatography , computer science , programming language
Abstract Experimental conditions are described for growing crystals from Hg solutions using as solute HgTe, HgSe or various solid solutions of the Cd x Hg 1– x Te, Zn x Hg 1– x Te, Cd x Hg 1– x Se and Zn x Hg 1– x Se systems. It is shown that the morphology and the dimensions of crystals obtained from HgSe and HgTe differ, being a function of maximum initial temperature of cooling. The X‐ray, chemical and electron microprobe analyses indicated that crystals obtained from solid solutions of Cd x Hg 1– x Te and Cd x Hg 1– x Se systems were formed from more than 99 mole% HgTe or HgSe respectively, with Cd inclusions on the crystal edges. Crystals obtained from solid solutions of Zn x Hg 1– x Te and Zn x Hg 1– x Se systems were formed from more than 99 mole% HgTe and HgSe respectively, with ZnTe or ZnSe inclusions random distributed in these. The main mechanism of formation of dislocation in the grown crystals is discussed. The greater influence of ZnTe or ZnSe inclusions than that of Cd inclusions on the dislocation density is shown. This influence is connected with the difference of covalent tetrahedral radii of elements which are to be substituted, and other external factors.