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Stresses in Silicon after Boron Diffusion (II). Stresses between the Glaze‐like Reaction Phase and Silicon and their Detection by Means of the Berg‐Barrett Method
Author(s) -
Brümmer O.,
Höche H. R.
Publication year - 1969
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19690040212
Subject(s) - glaze , materials science , boron , silicon , diffusion , substrate (aquarium) , layer (electronics) , amorphous solid , crystal (programming language) , ultimate tensile strength , phase (matter) , composite material , amorphous silicon , stress (linguistics) , metallurgy , crystalline silicon , crystallography , chemistry , thermodynamics , computer science , ceramic , geology , linguistics , physics , oceanography , philosophy , organic chemistry , programming language
If the specimens are specially prepared it is possible to detect the stresses between crystalline substrate and amorphous or crystalline thin covering layers by means of X‐ray topographic methods, espicially the Berg‐Barrett method. Investigations of the X‐ray contrast allow statements on whether the surface layers produce compressive or tensile stresses in the crystal. This method was used to obtain more detailed information on the glazelike surface layer formed during the boron‐diffusion process.