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Über die Gitterstruktur ionenbeschossener Germaniumeinkristalloberflächen
Author(s) -
Poser H.
Publication year - 1968
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19680030207
Subject(s) - germanium , silicon , die (integrated circuit) , ion , argon , diffraction , crystallography , materials science , range (aeronautics) , electron diffraction , lattice (music) , atomic physics , physics , chemistry , nanotechnology , optics , optoelectronics , quantum mechanics , acoustics , composite material
Differently oriented surfaces of Ge single crystals have been bombarded with argon ions within an energy range from 50 eV to 6 KeV. Electron diffraction patterns (50 kV) give information on the lattice structure of the bombarded surfaces. A conception of a model is given concerning the formation of focussed collisions in germanium and silicon single crystals.