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Benzoselenadiazole‐Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices
Author(s) -
Jadhav Rohit G.,
Kumar Amitesh,
Kumar Sanjay,
Maiti Sayan,
Mukherjee Shaibal,
Das Apurba K.
Publication year - 2020
Publication title -
chempluschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.801
H-Index - 61
ISSN - 2192-6506
DOI - 10.1002/cplu.202000229
Subject(s) - electrode , layer (electronics) , optoelectronics , active layer , optical switch , conjugated system , chemistry , materials science , nanotechnology , chemical engineering , thin film transistor , polymer , composite material , engineering
In this work, two symmetrical donor‐acceptor‐donor (D‐A‐D) type benzoselenadiazole (BSeD)‐based π‐conjugated molecules were synthesized and employed as an active switching layer for non‐volatile data storage applications. BSeD‐based derivatives with different donor units attached through common vinylene linkers showed different electrical and optical properties. 4,7‐Di((E)‐styryl)benzo[c][2,1,3]selenadiazole (DSBSeD) and 4,7‐bis((E)‐4‐methoxystyryl)benzo[c][2,1,3]selenadiazole (DMBSeD) are sandwiched between gallium‐doped ZnO (GZO) and metal aluminum electrodes respectively through solution‐processed spin‐coating method. The solution‐processed nanofibrous switching layer containing the DMBSeD‐based memory device showed reliable memory characteristics in terms of write and erase operations with low SET voltage than the random‐aggregated DSBSeD‐based device. The nanofibrous molecular morphology of switching layer overcomes the interfacial hole transport energy barrier at the interface of the DMBSeD thin‐film and the bottom GZO electrode. The memory device GZO/DMBSeD/Al based on nanofibrous switching layers shows switching characteristics at compliance current of 10 mA with V set =0.79 V and V reset =−0.55 V. This work will be beneficial for the rational design of advanced next‐generation organic memory devices by controlling the nanostructured morphology of active organic switching layer for enhanced charge‐transfer phenomenon.