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Large‐Area Schottky Junctions between ZnO and Carbon Nanotube Fibres
Author(s) -
MonrealBernal Alfonso,
Vilatela Juan J.
Publication year - 2018
Publication title -
chempluschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.801
H-Index - 61
ISSN - 2192-6506
DOI - 10.1002/cplu.201700522
Subject(s) - carbon nanotube , nanotechnology , nanotube , materials science , schottky diode , schottky barrier , carbon nanotube quantum dot , optoelectronics , diode
In this study, large‐area (10 cm 2 ) samples of heterojunctions between zinc oxide and carbon nanotube (CNT) fibre arrays were synthesised. A two‐step hydrothermal treatment was used to grow Zn nanowires (NWs) in situ directly onto the CNT array. This resulted in a bulk heterojunction that consisted of a five‐micron layer of ZnO crystals in contact with the built‐in CNT fabric current collector, with preferential orientation of the ZnO c axis perpendicular to the CNT sheet. The electrical properties of the heterojunction corresponded to a Schottky junction with a barrier height of 0.26 eV and an ideality factor of 2.9. Photoconductivity measurements indicated charge transfer through the ZnO/CNT interface, thus leading to a gain factor of approximately 100 and a responsivity as high as 5000 mA w −1 under UV irradiation. The resulting ZnO/CNT fibre hybrid was both piezoresistive and piezoelectric under transverse compression with an attractive format for energy‐harvesting applications.