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Inside Back Cover: Enhancing the Efficiency of Water Oxidation by Boron‐Doped BiVO 4 under Visible Light: Hole Trapping by BO 4 Tetrahedra (ChemPlusChem 7/2015)
Author(s) -
Li Yanqing,
Jing Tao,
Liu Yuanyuan,
Huang Baibiao,
Dai Ying,
Zhang Xiaoyang,
Qin Xiaoyan,
Whangbo MyungHwan
Publication year - 2015
Publication title -
chempluschem
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.801
H-Index - 61
ISSN - 2192-6506
DOI - 10.1002/cplu.201500260
Subject(s) - tetrahedron , doping , boron , trapping , photocatalysis , valence band , materials science , electron , cover (algebra) , visible spectrum , atom (system on chip) , photochemistry , atomic physics , crystallography , chemistry , optoelectronics , band gap , physics , catalysis , mechanical engineering , ecology , organic chemistry , quantum mechanics , engineering , biology , biochemistry , computer science , embedded system
The cover picture shows the visible‐light photocatalytic oxidation of water by m ‐BiVO 4 enhanced through B‐doping. This enhancement arises because B‐doping creates BO 4 tetrahedra, which are smaller than the VO 4 tetrahedra. In addition, B‐doping creates an occupied defect level for each B atom lying about 0.17 eV above the valence band maximum of pristine BiVO 4 . The BO 4 tetrahedra act as hole traps and therefore suppress the recombination of photogenerated electrons and holes. Details are given in the Full Paper by Baibiao Huang et al. on page 1113 .