Premium
Electronic Properties and Field‐Effect Transistors of Oligomers End‐Capped with Benzofuran Moieties
Author(s) -
Mallet Charlotte,
Didane Yahia,
Watanabe Takeshi,
Yoshimoto Noriyuki,
Allain Magali,
VidelotAckermann Christine,
Frère Pierre
Publication year - 2013
Publication title -
chempluschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.801
H-Index - 61
ISSN - 2192-6506
DOI - 10.1002/cplu.201300037
Subject(s) - benzofuran , thiophene , cyclic voltammetry , materials science , furan , organic electronics , absorption spectroscopy , electrochemistry , crystallography , analytical chemistry (journal) , chemistry , transistor , electrode , organic chemistry , optics , physics , voltage , quantum mechanics
Three new oligomers bearing furan, thiophene, or bithiophene units end‐capped by benzofuran moieties were synthesized and studied with respect to their structural, optical, electrochemical, and electrical properties. A comparison of the electronic properties performed by theoretical calculation, absorption and emission spectroscopy, and cyclic voltammetry revealed a strong influence of the spacer unit with a predominant impact on the emission spectra. Although both compounds with thiophene or bithiophene as central units presented relatively low quantum yields of 30 and 17 %, respectively, a maximum yield up to 71 % was measured for the compound based on a central furan core. High‐vacuum‐evaporated thin films were investigated by X‐ray diffraction and AFM, before implementation as p‐type semiconducting layers in organic field‐effect transistors. Only derivatives with thiophene or bithiophene as central units presented a transistor activity, with mobilities up to approximately 1×10 −2 cm 2 V −1 s −1 .