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Chlorine‐Doped ZnSe Nanoribbons with Tunable n‐Type Conductivity as High‐Gain and Flexible Blue/UV Photodetectors
Author(s) -
Wang Zhi,
Jie Jiansheng,
Li Fangze,
Wang Li,
Yan Tianxin,
Luo Linbao,
Nie Biao,
Xie Chao,
Jiang Peng,
Zhang Xiwei,
Yu Yongqiang,
Wu Chunyan
Publication year - 2012
Publication title -
chempluschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.801
H-Index - 61
ISSN - 2192-6506
DOI - 10.1002/cplu.201100063
Subject(s) - wurtzite crystal structure , optoelectronics , photodetector , doping , conductivity , annealing (glass) , chemistry , substrate (aquarium) , fabrication , materials science , nanotechnology , crystallography , composite material , medicine , oceanography , alternative medicine , pathology , hexagonal crystal system , geology
Although significant progress has been achieved in the fabrication of ZnSe nanostructures with various structures and morphologies, it remains a major challenge to rationally tune their transport properties for applications in future nano‐optoelectronic devices. The synthesis of chlorine‐doped ZnSe nanoribbons (NRs) with tunable n‐type conductivity is achieved by a thermal co‐evaporation method. The ZnSe:Cl NRs have single‐crystal wurtzite structure and [120] orientation, which also show high crystalline quality and structural integrity comparable with the undoped NRs. Electrical measurements on a single ZnSe:Cl NR reveal a substantial enhancement of the conductivity upon Cl doping. The conductivity could be further tuned by adjusting the doping level. In addition, highly sensitive blue/UV photodetectors are constructed based on the ZnSe:Cl NRs. The devices exhibit an extremely high gain of approximately 10 6 , and the UV response could be enhanced through a fast annealing process in air. By replacing the rigid SiO 2 /Si substrate with a PET substrate, flexible ZnSe:Cl NR photodetectors with excellent stability and durability under strain are realized. It is expected that the ZnSe:Cl NRs with tunable n‐type conductivity will have important applications in the new generation nano‐optoelectronic devices.