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The Effect of Lithium Doping in Solution‐Processed Nickel Oxide Films for Perovskite Solar Cells
Author(s) -
Saki Zahra,
Sveinbjörnsson Kári,
Boschloo Gerrit,
Taghavinia Nima
Publication year - 2019
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201900856
Subject(s) - non blocking i/o , materials science , doping , nickel oxide , energy conversion efficiency , photoluminescence , oxide , perovskite (structure) , thin film , analytical chemistry (journal) , optoelectronics , chemical engineering , inorganic chemistry , nanotechnology , metallurgy , chemistry , catalysis , chromatography , engineering , biochemistry
The effect of substitutional Li doping into NiO x hole transporting layer (HTL) for use in inverted perovskite solar cells was systematically studied. Li doped NiO x thin films with preferential crystal growth along the (111) plane were deposited using a simple solution‐based process. Mott‐Schottky analysis showed that hole carrier concentration (N A ) is doubled by Li doping. Utilizing 4 % Li in NiO x improved the power conversion efficiency (PCE) of solar devices from 9.0 % to 12.6 %. Photoluminescence quenching investigations demonstrate better hole capturing properties of Li:NiO x compared to that of NiO x , leading to higher current densities by Li doping. The electrical conductivity of NiO x is improved by Li doping. Further improvements of the device were made by using an additional ZnO layer onto PCBM, to remove shunt paths, leading to a PCE of 14.2 % and a fill factor of 0.72.
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