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High‐Quality Cs 2 AgBiBr 6 Double Perovskite Film for Lead‐Free Inverted Planar Heterojunction Solar Cells with 2.2 % Efficiency
Author(s) -
Gao Weiyin,
Ran Chenxin,
Xi Jun,
Jiao Bo,
Zhang Wenwen,
Wu Mincai,
Hou Xun,
Wu Zhaoxin
Publication year - 2018
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201800346
Subject(s) - crystallinity , materials science , heterojunction , energy conversion efficiency , solar cell , perovskite (structure) , planar , optoelectronics , perovskite solar cell , band gap , annealing (glass) , photovoltaic system , thin film , nanotechnology , chemical engineering , computer science , composite material , electrical engineering , computer graphics (images) , engineering
All‐inorganic double‐metal perovskite materials have recently gained much attention due to their three dimensionality (3D) and non‐toxic nature to replace lead‐based perovskite materials. Among all those double perovskite materials, theoretical works have demonstrated that Cs 2 AgBiBr 6 shows high stability and possesses a suitable band gap for solar‐cell applications. However, the film‐forming ability of Cs 2 AgBiBr 6 is found to be the utmost challenge hindering its development in thin‐film solar‐cell devices. In this work, a high‐quality Cs 2 AgBiBr 6 film with ultra‐smooth morphology, micro‐sized grains, and high crystallinity is realized via anti‐solvent dropping technology and post‐annealing at high temperature. After optimization, the first example of an inverted planar heterojunction solar‐cell device based on Cs 2 AgBiBr 6 exhibits a power conversion efficiency of 2.23 % with V OC =1.01 V, J SC =3.19 mA/cm 2 , and FF=69.2 %. Besides, the device shows no hysteresis and a high stability.